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| LESHAN RADIO COMPANY, LTD. Silicon Tuning Diode These devices are designed forgeneral frequency control and tuning applications. They provide solid- state reliability in replacement of mechanical tuning methods. * High Q with Guaranteed Minimum Values at VHF Frequencies * Controlled and Uniform Tuning Ratio * Available in Surface Mount Package MMBV409LT1 MV409 VOLTAGE VARIABLE CAPACITANCE DIODES 3 3 CATHODE 1 ANODE 1 2 CASE 318-08, STYLE 8 SOT- 23 (TO-236AB) MAXIMUM RATINGS Rating Reverse Voltage Forward Current Forward Power Dissipation @ TA = 25C Derate above 25C Junction Temperature Storage Temperature Range Symbol VR IF PD 280 2.8 TJ Tstg +125 -55 to +150 225 1.8 mW mW/C C C MBV409 20 200 MMBV409LT1 20 200 Unit Vdc mAdc DEVICE MARKING MMBV409LT1 = X5, MV409 = MV409 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 Adc) Reverse Voltage Leakage Current (VR = 15 Vdc) Diode Capacitance Temperature Coefficient (VR = 3.0 Vdc, f = 1.0 MHz) Symbol V(BR)R IR TCC Min 20 -- -- Typ -- -- 300 Max -- 0.1 -- Unit Vdc Adc ppm/C Ct, Diode Capacitance VR = 3.0 Vdc, f = 1.0 MHz pF Device MMBV409LT1, MV409 Min 26 Nom 29 Max 32 Q, Figure of Merit VR = 3.0 Vdc f = 50 MHz Min 200 CR, Capacitance Ratio C3/C8 f = 1.0 MHz(1) Min 1.5 Max 1.9 1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 8 Vdc. LESHAN RADIO COMPANY, LTD. MMBV409LT1 MV409 TYPICAL CHARACTERISTICS 40 1000 C T , DIODE CAPACITANCE (pF) Q , FIGURE OF MERIT 32 24 f = 1.0MHz TA = 25C V R =3Vdc T A = 25C 100 16 8 0 1 2 3 10 20 30 100 10 10 100 1000 V R , REVERSE VOLTAGE (VOLTS) f , FREQUENCY ( MHz ) Figure 1. Diode Capacitance Figure 2. Figure of Merit CT,DIODECAPACITANCE(NORMALIZED) , REVERSE CURRENT ( nA ) 100 60 20 10 6.0 2.0 1.0 0.6 0.2 0.1 0.06 0.02 0.01 0.006 0.002 0.001 -60 -40 -20 0 +20 +40 +60 +80 +100 +120 +140 1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 -75 -50 -25 0 +25 +50 +75 +100 +125 V R= 3.0Vdc f = 1.0MHz V R= 15Vdc I R T A , AMBIENT TEMPERATURE (C) T A , AMBIENT TEMPERATURE (C) Figure 3. Leakage Current Figure 4. Diode Capacitance MMBV409-2/2 |
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